| PART |
Description |
Maker |
| ZXMN3F318DN8 ZXMN3F318DN8TA |
30V SO8 Asymmetrical dual N-channel enhancement mode
|
Diodes Incorporated
|
| ZXMN3F318DN8 |
30V SO8 Asymmetrical dual N-channel enhancement mode MOSFET
|
Diodes
|
| ZXMN3F31DN8TA ZXMN3F31DN8 |
30V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
30V SO8 dual N-channel enhancement mode MOSFET
|
Diodes Incorporated
|
| ZXMHC3F381N8 ZXMHC3F381N8TC |
30V SO8 Complementary enhancement mode MOSFET H-Bridge
|
Diodes Incorporated
|
| BSO064N03S |
OptiMOS2 Power-Transistor
Low Voltage MOSFETs - OptiMOS? Power MOSFET, 30V, SO8, RDSon = 6.4mOhm, 16A, LL
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| ZXMN6A11DN8 ZXMN6A11DN8TA ZXMN6A11DN806 |
60V SO8 Dual N-channel enhancement mode MOSFET
|
Zetex Semiconductors
Diodes Incorporated
|
| ZXMN6A25DN8 ZXMN6A25DN806 |
Dual 60V SO8 N-channel enhancement mode MOSFET
|
Zetex Semiconductors
Diodes Incorporated
|
| BSO604NS2 |
Low Voltage MOSFETs - Dual-SO8; 5 A; 55V; LL; 35 mOhm
OptiMOS Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
| CA82C12-10CD CA82C12-10CP CA82C12-10CJ CA82C12-10I |
TRANSIL
I/O Port
DUAL ASYMMETRICAL OVERVOLTAGE PROTECTION FOR TELECOM LINE I / O端口
|
Rubycon, Corp.
|
| MCH6613 |
Power MOSFET 30V, 0.35A, 3.7Ohm,-30V, -0.2A, 10.4Ohm, Complementary Dual MCPH6
|
ON Semiconductor
|
